TR-2020 Thermal Resistance Tester
TR-2020 High Power Thermal Resistance Tester Features
1. Displays both VBE1(VSD1) and & ΔVBE(& ΔVSD)
2. Special contact inspection function can prevent measurement errors and misinstallation caused by poor contact.
3. The oscillation detection function can prevent measurement errors and misclassification caused by oscillation
4. GATE LIMIT voltage of MOS-FET can be set. Built-in device protection circuit can prevent damage due to overheating
5. TR-2020 can be controlled externally by RS-232C I/F
6. TR-2020 can be connected to an automatic classifier (processor)
7. JDV240 can be installed in a 19-inch rack
8. The system has two workstations (two switching functions)
Key Specifications
Measurement Range
1. NPN/PNP, N-MOSFET/P-MOSFET, N-DIODE/P-DIODE, N-IGBT(GE)/P-IGBT(GE), N-IGBT(CE)/ P-IGBT(CE), SCR I/SCR III
2. Contact inspection before testing, open circuit/short circuit inspection between terminals
3. Measurement Range VBE1/VSD1/VCE1/VF1 0000.0mV to 3200.0mV & ΔVBE/ΔVSD/ΔVCE/ΔVF/ΔVT 000.0mV〜999.9mV (Accuracy: ±2% or 0.3mV)
VGE1 0000mV〜9999mV ΔVGE0000mV〜l999mV (Accuracy: ±2% or 3mV)
4. Measurement time: PT TIME +20ms (setting value change: mandatory time (PT) +70ms) (per 1 station) Setting range
| Test Items | Range | Accuracy | Set value |
| Emitter Forcing Current IE/ID |
0.01A~39.90A | ±(1%+2mA) | 4 (Upper 3 digits are effective) |
| Measurement Current IM |
01mA to 99mA | 01mA～99mA ±(1%+0.2mA) |
2 |
| GATE LIMIT Voltage GATE-L (IG current [ΔVT]) |
01.0V~19.9V 0.1mA ~ 39.9mA |
±0.5V ±(1%+0.2mA) |
3 |
| Power Forcing Time PT |
100μs~999ms | ±(0.1%+10μs) | 3+Exponents |
| Delay Time DT |
10μs~999μs | ±1μs ±(0.1%+1μs) |
3 |
| LOWER GATE UPPER GATE |
000.0mV~999.9mV ΔVGE:0000mV～1999mV |
DIGITAL COMPARATE |
4 |
| VCB/VDS | 1V to 199V | ±(0.2%+0.2V) | 3 |
